吸收电容采用双面金属化膜,耐大电流冲击,广泛用于逆变器/变频器/电磁感应加热等高压高频电路,常用规格库存充足,交货期短。 IGBT缓冲吸收
电容器(MKPH) IGBT snubber capacitor 主要特点: Features1采用加厚金属
电极 Thickende metalized electrode 2损耗小,内部温升小 Low lossand small inherent temperature rise3耐大电流冲击 Large current shock resistance主要用途: Typical Applications1高压高频脉冲电路 used in high voltage,high frequency and pulse circuit2吸收和SCR整流电路 Snubber and SCR circuits 3功率开关器件峰值脉冲保护 Power on-off appliances for protecion 技术要求 Specifications引用标准Reference standardGB/T 17702(IEC 61071)气候类别Climatic Category40/85/56工作温度范围(外壳温度点)Operating temperature rang(Mxa temperature of case surface)-40℃~85℃额定电压Rated Voltage630~3000Vdc电容量范围Capacitance Range0.1μF~10μF电容量偏差Capacitance ToleranceJ(±5%), K(±10%),耐电压Voltege proof1.60UR(5s)损耗角正切Dissipation Factor≤0.0010 (1kHz, 20℃)绝缘电阻Insulation Resistance≥50 000MΩ, CR≤0.33μF≥15 000s CR>0.33μF(20℃, 100V,1min)预期寿命Expected lifetime≥100000h V=Ur T=70℃